|
Volumn 537, Issue , 1999, Pages
|
Thermal residual stress modeling in ain and gan multi layer samples
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ELECTRIC PROPERTIES;
ELECTRONIC PROPERTIES;
EPITAXIAL GROWTH;
FINITE ELEMENT METHOD;
MULTILAYERS;
NITRIDES;
RESIDUAL STRESSES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
THERMAL EFFECTS;
THERMAL EXPANSION;
THICKNESS CONTROL;
RESIDUAL STRESS DISTRIBUTION;
THERMAL RESIDUAL STRESS;
THICKNESS EFFECTS;
SEMICONDUCTING FILMS;
|
EID: 4444333668
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
Times cited : (4)
|
References (11)
|