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Volumn 537, Issue , 1999, Pages

Thermal residual stress modeling in ain and gan multi layer samples

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; FINITE ELEMENT METHOD; MULTILAYERS; NITRIDES; RESIDUAL STRESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS; THERMAL EXPANSION; THICKNESS CONTROL;

EID: 4444333668     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (4)

References (11)
  • 4
    • 0031348654 scopus 로고    scopus 로고
    • edited by F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and S. Strite Mat. Res. Soc. Symp. Proc. 482, Boston, MA
    • K. Wang and R. R. Reeber in Nitride Semiconductors, edited by F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and S. Strite (Mat. Res. Soc. Symp. Proc. 482, Boston, MA, 1997) pp. 863-868.
    • (1997) Nitride Semiconductors , pp. 863-868
    • Wang, K.1    Reeber, R.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.