Improved magnetic tunnel junction with amorphous seed layer, surface treatment, and high-polarization magnetic materials

IEEE Transactions on Magnetics

Volumn 40, Issue 4 II, 2004, Pages 2275-2277

  Lee, J E ^a   Roh, Y ^a   Oh, S C ^b   Kim, H J ^b   Ha, Y K ^b   Bae, J S ^b   Back, I G ^b   Park, S O ^b   Chung, U I ^b   Moon, J T ^b  

^a Sungkyunkwan University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Amorphous seed; Ion beam etch (IBE); Magnetic polarization; Magnetic tunnel junction (MTJ); Roughness; Surface treatment; Tunnel oxide; Tunnelling magnetoresistance (TMR) ratio; Wettability

Indexed keywords

ANTIFERROELECTRIC MATERIALS; CMOS INTEGRATED CIRCUITS; ETCHING; MAGNETIC MATERIALS; MAGNETORESISTANCE; OXIDATION; OXIDES; POLARIZATION; SURFACE ROUGHNESS; SURFACE TREATMENT;

AMORPHOUS SEED; ION BEAM ETCH (IBE); MAGNETIC POLARIZATION; MAGNETIC TUNNEL JUNCTIONS (MTJ); TUNNEL OXIDES; TUNNELING MAGNETORESISTANCE (TMR) RATIO; WETTABILITY;

TUNNEL JUNCTIONS;

EID: 4444318803     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.828968     Document Type: Article

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