Vertical integration of a spin dependent tunnel junction with an amorphous Si diode

Applied Physics Letters

Volumn 74, Issue 25, 1999, Pages 3893-3895

  Sousa, R C ^a,b   Freitas, P P ^a,b   Chu, V ^a   Conde, J P ^b  

^a INESC   (Portugal)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; LEAKAGE CURRENTS; MAGNETIC FIELD EFFECTS; MAGNETIC STORAGE; MAGNETORESISTANCE; RANDOM ACCESS STORAGE; SEMICONDUCTOR DIODES;

MAGNETIC TUNNEL JUNCTIONS; TUNNELING MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 0032606313     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124215     Document Type: Article

References (9)

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