메뉴 건너뛰기




Volumn 13, Issue 1, 2003, Pages 1-3

5.8-GHz CMOS T/R switches with high and low substrate resistances in a 0.18-μm CMOS process

Author keywords

Integrated circuits; RF CMOS switch; Substrate resistances; T R switch

Indexed keywords

ELECTRIC RESISTANCE; INSERTION LOSSES; SIGNAL RECEIVERS; SWITCHING SYSTEMS; TRANSMITTERS;

EID: 0037259908     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2002.807698     Document Type: Article
Times cited : (70)

References (10)
  • 1
    • 0033719724 scopus 로고    scopus 로고
    • A 5.2-GHz CMOS receiver with 62-dB image rejection
    • June
    • B. Razavi, "A 5.2-GHz CMOS receiver with 62-dB image rejection," in VLSI Circuits Symp. Dig. Tech. Papers, June 2000, pp. 34-37.
    • (2000) VLSI Circuits Symp. Dig. Tech. Papers , pp. 34-37
    • Razavi, B.1
  • 2
    • 0035058181 scopus 로고    scopus 로고
    • A fully-integrated 5 GHz CMOS wireless-LAN receiver
    • Feb.
    • H. Samavati, H. R. Rategh, and T. H. Lee, "A fully-integrated 5 GHz CMOS wireless-LAN receiver," in ISSCC Dig. Tech. Papers, Feb. 2001, pp. 208-209.
    • (2001) ISSCC Dig. Tech. Papers , pp. 208-209
    • Samavati, H.1    Rategh, H.R.2    Lee, T.H.3
  • 4
    • 0033682273 scopus 로고    scopus 로고
    • A 900-MHz T/R switch with a 0.8-dB insertion loss implemented in a 0.5-μm CMOS process
    • Orlando, FL
    • F.-J. Huang and K. K. O, "A 900-MHz T/R switch with a 0.8-dB insertion loss implemented in a 0.5-μm CMOS process," in Proc. IEEE CICC, Orlando, FL, 2000, pp. 341-344.
    • (2000) Proc. IEEE CICC , pp. 341-344
    • Huang, F.-J.1    O, K.K.2
  • 5
    • 2942753791 scopus 로고    scopus 로고
    • A 2.4-GHz single-pole double-throw T/R switch with 0.8-dB insertion loss implemented in a CMOS process
    • Sept.
    • _, "A 2.4-GHz single-pole double-throw T/R switch with 0.8-dB insertion loss implemented in a CMOS process," in Proc. ESSCIRC, Sept. 2001.
    • (2001) Proc. ESSCIRC
  • 6
    • 0035274679 scopus 로고    scopus 로고
    • A 0.5-μm T/R switch for 900-MHz wireless applications
    • May
    • _, "A 0.5-μm T/R switch for 900-MHz wireless applications," IEEE J. Solid-State Circuits, vol. 36, pp. 486-492, May 2000.
    • (2000) IEEE J. Solid-State Circuits , vol.36 , pp. 486-492
  • 7
    • 0000133648 scopus 로고    scopus 로고
    • Effects of substrate resistances on LNA performance and a bond-pad structure for reducing the effects in a silicon bipolar technology
    • Sept.
    • J. Colvin, S. Bhatia, and K. K. O, "Effects of substrate resistances on LNA performance and a bond-pad structure for reducing the effects in a silicon bipolar technology," IEEE J. Solid State Circuits, vol. 34, pp. 1339-1344, Sept. 1999.
    • (1999) IEEE J. Solid State Circuits , vol.34 , pp. 1339-1344
    • Colvin, J.1    Bhatia, S.2    O, K.K.3
  • 8
    • 0013017909 scopus 로고    scopus 로고
    • Taiwan Semiconductor Manufacturing Co. Hsinchu, Taiwan, R.O.C.
    • TDDB Results for 0.18 μm, Taiwan Semiconductor Manufacturing Co. Hsinchu, Taiwan, R.O.C., 2001.
    • (2001) TDDB Results for 0.18 μm
  • 9
    • 0033348613 scopus 로고    scopus 로고
    • Multi-throw plastic MMIC switches up to 6 GHz with integrated positive control logic
    • J. Smuk, M. Mahfoudi, D. Belliveau, and M. Shifrin, "Multi-throw plastic MMIC switches up to 6 GHz with integrated positive control logic," in GaAs IC Symp. Dig. Tech., 1999, pp. 259-262.
    • (1999) GaAs IC Symp. Dig. Tech. , pp. 259-262
    • Smuk, J.1    Mahfoudi, M.2    Belliveau, D.3    Shifrin, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.