Fully terminated Ka band high isolation, high power MMIC SPDT switch in GaAs PIN technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2003, Pages 2019-2022

  Levy, O ^a   Madjar, A ^a   Kryger, D ^a   Matarasso, S ^a  

^a RAFAEL   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRIC LOSSES; MILLIMETER WAVES; RESISTORS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCEIVERS;

SHUNT DIODES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0042090648     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. th European Microwave Conference, September 8-12, 1997, Jerusalem, Israel.
2. J. V. Bellantoni, D. C. Bartle, D. Payne, G. McDermott, S. Bandla, R. Tayrani, L. Raffaelli, 1989 Microwave and Millimeter-Wave Monolithic Circuits Symposium, 12-13 June, 1989.
3. K. W. Kobayashi, L. Tran, A. K. Oki, D. C. Streit, "A 50 MHz - 30 GHz broadband co-planar waveguide SPOT PIN diode switch with 45-db isolation", IEEE Microwave and Guided Wave Letters, Feb. 1995, pp. 56-58.
4. P. Seung-Won, K. Hyun-Il, et al., "1-26 GHz high power PIN diode switch", 2000 IEEE MTT-S International Symposium Digest, 11-16 June 2000.
5. L. Jar-Lon, D. Zych, E. Reese, D. M. Drury, "Monolithic 2-18 GHz low loss, on chip biased PIN diode switches", IEEE Transactions on Microwave Theory and Techniques, Feb. 1995, pp. 250-256.
6. G. Hiller, R. H. Caverly, "The reverse bias requirement for pin diodes in high power switches and phase shifters", IEEE MTT-S International Microwave Symposium Digest, 8-10 May 1990, pp. 1321-1324.