An antenna switch MMIC using E/D mode p-HEMT for GSM/DCS/PCS/WCDMA bands application

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2003, Pages

  Tosaka, Hiroyuki ^a   Fujii, Tetsu ^a   Miyakoshi, Kaoru ^a   Ikenaka, Kazushige ^a   Takahashi, Masaru ^a  

^a JAPAN RADIO CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; HIGH ELECTRON MOBILITY TRANSISTORS; LOGIC CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SWITCHING;

CELLULAR-PHONE SYSTEMS;

GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS;

EID: 0042164377     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. M. Masuda, N. Ohbata, H. Ishiuchi, K. Onda, and R. Yamamoto, "High Power Heterojunction GaAs Switch IC with P-1 dB of more than 38 dBm for GSM Application" IEEE GaAs IC Symposium Digest, 1998, pp. 229-232.
2. A. Narayama, M. Nishibe, T. Inaoka, and N. Mineshima, "Low-Insertion-Loss DP3T MMIC Switch for Dual-Band Cellular Phones" IEEE Journal of Solid-State Circuits, Vol.34, No.8 August 1999, pp. 1051-1055
3. S. Makioka, Y. Anda, K. Miyatsuji, and D. Ueda, "Super Self-Aligned GaAs RF Switch IC with 0.25 dB Extremely Low Insertion Loss for Mobile Communication Systems" IEEE Transactions on Electron Device, Vol. 48, No.8, August 2001