An electrothermal BSIM3 model for large-signal operation of RF power LDMOS devices

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 861-864

  Tornblad, Olof ^a   Blair, Cindy ^a  

^a ERICSSON RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; POWER AMPLIFIERS; RADIO FREQUENCY AMPLIFIERS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

ELECTROTHERMAL COUPLING; INTERNAL MATCHING NETWORKS;

MOS DEVICES;

EID: 0036065743     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011766     Document Type: Article

References (7)

1. A new electrothermal non-linear model for silicon RF LDMOS FET’s
2. An empirical table-based FET model
3. Bias-dependent linear scalable millimeter-wave FET model
4. A physical large-signal Si MOSFET model for RF circuit design
5. Modeling and characterisation of an 80-V silicon LDMOSFET for emerging RFIC applications
6. Study of the quasi-saturation effect in VDMOS transistors
7. RF LDMOS characterization and its compact modeling