Atomic force microscope cantilever array for parallel lithography of quantum devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 B, 2004, Pages 4041-4044

  Kakushima, Kuniyuki ^a   Watanabe, Toshiyuki ^b   Shimamoto, Kouji ^b,e   Gouda, Takushi ^c   Ataka, Manabu ^a   Mimura, Hidenori ^d   Isono, Yoshimasa ^b   Hashiguchi, Gen ^c   Mihara, Yutaka ^c   Fujita, Hiroyuki ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

^c KAGAWA UNIVERSITY   (Japan)

^d SHIZUOKA UNIVERSITY   (Japan)

^e Noritsu Koki Co Ltd   (Japan)

Author keywords

Atomic force microscope (AFM); Electric field enhanced oxidation; KOH; Local oxidation of silicon (LOCOS); Scanning probe lithography (SPL); Self assembled monolayer (SAM); Single electron transistor (SET)

Indexed keywords

ELECTRIC-FIELD-ENHANCED OXIDATION; LOCAL OXIDATION OF SILICON (LOCOS); SCANNING PROBE LITHOGRAPHY (SPL); SELF-ASSEMBLED MONOLAYER (SAM); SINGLE-ELECTRON TRANSISTOR (SET);

ARRAYS; ATOMIC FORCE MICROSCOPY; ELECTRIC FIELD EFFECTS; ETCHING; LITHOGRAPHY; MONOLAYERS; OXIDATION; PROBES; SCANNING; SILICON COMPOUNDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 4444269331     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.4041     Document Type: Conference Paper

References (14)

1. C. F. Quate: Surf. Sci. 386 (1997) 259.
2. P. M. Campbell, E. S. Snow and P. J. McMarr: Appl. Phys. Lett. 66 (1995) 1388.
3. K. Matsumoto, M. Ishii and K. Segawa: J. Vac. Sci. & Technol. B 14 (1996) 1331.
4. T. Hattori, Y. Ejiri, K. Saito and M. Yasutake: J. Vac. Sci. & Technol. A 12 (1994) 2586.
5. N. Kramer, J. Jorritsma, H. Birk and C. Schonenberger: J. Vac. Sci. & Technol. B 13 (1995) 805.
6. H. J. Song, M. J. Rack, K. Abugharbieh, S. Y. Lee, V. Khan, D. K. Ferry and D. R. Allee: J. Vac. Sci. & Technol. B 12 (1994) 3720.
7. S. C. Minne, P. Flueckiger, H. T. Soh and C. F. Quate: J. Vac. Sci. & Technol. B 13 (1995) 1380.
8. D. Saya, K. Fukushima, H. Toshiyoshi, G. Hashiguchi, H. Fujita and H. Kawakatsu: Sens. & Actuat. A: Physical 95 (2002) 281.
9. A. E. Gordon, R. T. Fayfield, D. D. Litfin and T. K. Higman: J. Vac. Sci. & Technol. B 13 (1995) 2805.
10. H. Sugimura, T. Uchida, N. Kitamura and H. Masuhara: Appl. Phys. Lett. 63 (1993) 1288.
11. E. S. Snow, D. Park and P. M. Campbell: Appl. Phys. Lett. 69 (1996) 269.
12. A. Majumdar, P. I. Oden, J. P. Carrejo, L. A. Nagahara, J. J. Graham and J. Alexander: Appl. Phys. Lett. 61 (1992) 2293.
13. F. K. Perkins, E. A. Dobisz, S. L. Brandow, T. S. Loloski, J. M. Calvert, K. W. Rhee, J. E. Kosakowski and C. R. K. Marrian: J. Vac. Sci. & Technol. B 12 (1994) 3725.
14. Y. Isono, K. Shimamoto, G. Hashiguchi, Y. Mihara, H. Mimura, T. Hiramoto and H. Fujita: Proc. IEEE 12th Int. Conf. Solid-State Sensors, Actuators and Microsystems (Transducers 03) (Boston, 2003) p. 242.