Conductance hysteresis and switching in a single-molecule junction

Journal of Physical Chemistry C

Volumn 112, Issue 14, 2008, Pages 5241-5244

  Wu, S W ^a   Ogawa, N ^a,b   Nazin, G V ^a   Ho, W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA FILMS; AMERICAN CHEMICAL SOCIETY (ACS); BI-STABILITY; CHARGE STATES; DOUBLE-BARRIER JUNCTIONS; IN SITU VISUALIZATION; RELATIVE STABILITIES; SCANNING-TUNNELING MICROSCOPE (STM); SINGLE MOLECULE (SM); VOLTAGE-CONTROLLED;

ADSORPTION; ALUMINA; ELASTICITY; HYSTERESIS; OPTICAL BISTABILITY; SURFACE CHARGE;

MOLECULES;

EID: 44349118337     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp7114548     Document Type: Article

References (23)

1. Troisi, A.; Ratner, M. A. Small 2006, 2, 172.
2. Blum, A. S.; Kushmerick, J. G.; Long, D. P.; Patterson, C. H.; Yang, J. C.; Henderson, J. C.; Yao, Y. X.; Tour, J. M.; Shashidhar, R.; Ratna, B. R. Nat. Mater. 2005, 4, 167.
3. Duan, X. F.; Huang, Y.; Lieber, C. M. Nano Lett. 2002, 2, 487.
4. Collier, C. P.; Mattersteig, G.; Wong, E. W.; Luo, Y.; Beverly, K.; Sampaio, J.; Raymo, F. M.; Stoddart, J. F.; Heath, J. R. Science 2000, 289, 1172.
5. Li, C.; Ly, J.; Lei, B.; Fan, W.; Zhang, D. H.; Han, J.; Meyyappan, M.; Thompson, M.; Zhou, C. W. J. Phys. Chem. B 2004, 108, 9646.
6. Qiu, X. H.; Nazin, G. V.; Ho, W. Phys. Rev. Lett. 2004, 93, 196806.
7. Brewer, J. E.; Zhirnov, V. V.; Hutchby, J. A. IEEE Circuits and Devices 2005, 21, 13.
8. Wu, S. W.; Ogawa, N.; Ho, W. Science 2006, 312, 1362.
9. Galperin, M.; Ratner, M. A.; Nitzan, A. Nano Lett. 2005, 5, 125.
10. Repp, J.; Meyer, G.; Olsson, F. E.; Persson, M. Science 2004, 305, 493.
11. Olsson, F. E.; Paavilainen, S.; Persson, M.; Repp, J.; Meyer, G. Phys. Rev. Lett. 2007, 98, 176803.
12. Sterrer, M.; Risse, T.; Pozzoni, U. M.; Giordano, L.; Heyde, M.; Rust, H.-P.; Pacchioni, G.; Freund, H.-J. Phys. Rev. Lett. 2007, 98, 096107.
13. 6 STM images taken at various bias voltages in the two switching states of Zn-etioporphyrin on NiAl(110) favor the possibility of charge bistability as discussed in the text. However, background contribution from the metal substrate in the d//dV spectra does not allow an unambiguous determination of the exact mechanism.
14. Kresse, G.; Schmid, M.; Napetschnig, E.; Shishkin, M.; Kohler, L.; Varga, P. Science 2005, 308, 1440.
15. The Porphyrin Handbook; Kadish, K. M., Smith, K. M., Guilard, R., Eds.; Academic Press: New York, 2000; Vol. 3, pp 53-56.
16. The switching voltages become smaller when the bias sweeping speed is reduced. But the lower bounds of the switching voltage are defined by the onset of molecular electronic states, as evidenced by the black squares in Figure 3A in ref 8.
17. Wu, S. W.; Nazin, G. V.; Chen, X.; Qiu, X. H.; Ho, W. Phys. Rev. Lett. 2004, 93, 236802.
18. Nguyen, K. A.; Pachter, R. J. Chem. Phys. 2001, 114, 10757.
19. Spangler, D.; Maggiora, G. M.; Shipman, L. L.; Christoffersen, R. E. J. Am. Chem. Soc. 1977, 99, 7478.
20. Mills, D. L.; Cao, J. X.; Wu, R. Q. Phys. Rev. B 2007, 75, 205439.
21. Maddox, J. B.; Harbola, U.; Mayoral, K.; Mukamel, S. J. Phys. Chem. C 2007, 111, 9516.
22. b < 0).
23. b is restricted to avoid tunneling through the trapped molecular states.