Visualizing stress in silicon micro cantilevers using scanning confocal Raman spectroscopy

Microelectronic Engineering

Volumn 85, Issue 5-6, 2008, Pages 1443-1446

  Bauer, M ^a   Gigler, A M ^a   Richter, C ^b   Stark, R W ^a  

^a UNIVERSITY OF MUNICH   (Germany)

^b NANOWORLD SERVICES GMBH   (Germany)

Author keywords

Local heating; Micro structure; Raman spectroscopy; Silicon; Stokes shift; Stress; Temperature dependence

Indexed keywords

CONFOCAL MICROSCOPY; CRYSTAL ORIENTATION; EIGENVALUES AND EIGENFUNCTIONS; RAMAN SPECTROSCOPY; THERMAL EFFECTS;

FLEXURAL EIGENMODE; MECHANICAL STRESS; THERMALLY INDUCED SHIFT;

SILICON WAFERS;

EID: 44149128216     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.01.089     Document Type: Article

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