Impact of feature-size dependent etching on the optical properties of photonic crystal devices

Journal of Applied Physics

Volumn 103, Issue 9, 2008, Pages

  Berrier, A ^a   Ferrini, R ^b   Talneau, A ^c   Houdr R ^d   Anand, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b EPFL   (Switzerland)

^c UNIV PARIS SUD   (France)

^d École Polytechnique F d rale   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; ETCHING; FABRY-PEROT INTERFEROMETERS; ION BEAMS; REFLECTION;

EXTRINSIC LOSSES; HOLE DEPTH; PHOTONIC CRYSTAL DEVICES; QUALITY FACTORS;

PHOTONIC CRYSTALS;

EID: 43949097571     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2913168     Document Type: Article

References (16)

1. A. Talneau, J. L. Gentner, A. Berrier, M. Mulot, S. Anand, and S. Olivier, Appl. Phys. Lett. 0003-6951 10.1063/1.1789573 85, 1913 (2004).
2. X. Checoury, P. Crozat, J. -M. Lourtioz, C. Cuisin, E. Derouin, O. Drisse, F. Poigt, L. Legouezigou, P. Pommereau, G. -H. Duan, O. Gauthier-Lafaye, S. Bonnefont, D. Mulin, F. Lozes-Dupuy, and A. Talneau, Opt. Express 1094-4087 10.1364/OPEX.13.006947 13, 6947 (2005).
3. M. Kamp, T. Happ, S. Mahnkopf, G. Duan, S. Anand, and A. Forchel, Physica E (Amsterdam) 1386-9477 10.1016/j.physe.2003.11.122 21, 802 (2004).
4. R. Ferrini, B. Lombardet, B. Wild, R. Houdŕ, and G. -H. Duan, Appl. Phys. Lett. 0003-6951 10.1063/1.1545167 82, 1009 (2003).
5. A. S. Jugessur, P. Pottier, and R. M. De La Rue, Electron. Lett. 0013-5194 10.1049/el:20030241 39, 367 (2003).
6. A. Talneau, M. Mulot, S. Anand, and Ph. Lalanne, Appl. Phys. Lett. 0003-6951 10.1063/1.1568821 82, 2577 (2003).
7. H. -Y. Ryu, H. -G. Park, and Y. -H. Lee, IEEE J. Sel. Top. Quantum Electron. 1077-260X 10.1109/JSTQE.2002.801681 8, 891 (2002).
8. M. Mulot, S. Anand, C. F. Carlström, M. Swillo, and A. Talneau, Phys. Scr., T 0281-1847 10.1238/Physica.Topical.101a00106 T101, 106 (2002).
9. M. Mulot, S. Anand, R. Ferrini, B. Wild, R. Houdŕ, J. Moosburger, and A. Forchel, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1688353 22, 707 (2004).
10. M. Kotlyar, L. O'Faolain, R. Wilson, and T. F. Krauss, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1767106 22, 1788 (2004).
11. A. Berrier, M. Mulot, A. Talneau, R. Ferrini, R. Houdŕ, and S. Anand, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2402142 25, 1 (2007).
12. R. Ferrini, D. Leuenberger, M. Mulot, M. Qiu, J. Moosburger, M. Kamp, A. Forchel, S. Anand, and R. Houdŕ, IEEE J. Quantum Electron. 0018-9197 10.1109/JQE.2002.1017588 38, 786 (2002).
13. S. Foteinopoulou and C. Soukoulis, IEEE J. Quantum Electron. 0018-9197 10.1109/JQE.2002.1017596 38, 844 (2002).
14. M. Rattier, H. Benisty, C. J. M. Smith, A. B́raud, D. Cassagne, C. Jouanin, T. F. Krauss, and C. Weisbuch, IEEE J. Quantum Electron. 0018-9197 10.1109/3.903074 37, 237 (2001).
15. R. Ferrini, A. Berrier, L. A. Dunbar, R. Houdŕ, M. Mulot, S. Anand, S. de Rossi, and A. Talneau, Appl. Phys. Lett. 0003-6951 10.1063/1.1813634 85, 3998 (2004).
16. R. Ferrini, D. Leuenberger, R. Houdŕ, H. Benisty, M. Kamp, and A. Forchel, Opt. Lett. 0146-9592 10.1364/OL.31.001426 31, 1426 (2006).