Measurement of enhanced gate-controlled band-to-band tunneling in highly strained silicon-germanium diodes

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 468-470

  Nayfeh, Osama M ^a   Chléirigh, Cáit Ní ^a   Hoyt, Judy L ^a   Antoniadis, Dimitri A ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

Author keywords

Band to band (BTB); Strained germanium; Transistor; Tunneling

Indexed keywords

ENERGY GAP; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE MEASUREMENT; TRANSISTORS; VALENCE BANDS;

BAND-TO-BAND; STRAINED SILICON-GERMANIUM DIODES;

ELECTRON TUNNELING;

EID: 43549123529     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.920280     Document Type: Article

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