Formation of high conductivity WSix layer and its characterization as a gate electrode

Journal of the Electrochemical Society

Volumn 145, Issue 9, 1998, Pages 3228-3235

  Byun, Jeong Soo ^a   Lee, Byung Hak ^a   Park, Ji Soo ^a   Sohn, Dong Kyun ^a   Choi, Sung Jun ^a   Kim, Jae Jeong ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); PARTICLE SIZE ANALYSIS; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SILICON; TUNGSTEN COMPOUNDS;

TUNGSTEN SILICIDE;

ELECTROCHEMICAL ELECTRODES;

EID: 0032163674     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838790     Document Type: Article

References (15)