1/f noise and "ballistic mobility" in GaN/AlGaN heterostructure field effect transistors in high magnetic fields

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5470, Issue , 2004, Pages 277-285

  Rumyantsev, Sergey ^a   Shur, Michael S ^e   Knap, Wojciech ^b   Dyakonova, Nina ^b   Pascal, Fabien ^c   Hoffman, Alain ^c   Ghuel, Y ^d   Gaquiere, C ^d   Theron, D ^d  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c UNIVERSITÉ MONTPELLIER II   (France)

^d INSTITUT D ELECTRONIQUE   (France)

^e NONE

Author keywords

1 f noise; GaN AlGaN; HFET; Magneto resistance; Mobility

Indexed keywords

1/F NOISE; BAND-GAP SEMICONDUCTORS; GAN/ALGAN; HFETS;

CURRENT VOLTAGE CHARACTERISTICS; DEGREES OF FREEDOM (MECHANICS); ELECTRON MOBILITY; ELECTRON TUNNELING; MAGNETIC FIELDS; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SPURIOUS SIGNAL NOISE;

FIELD EFFECT TRANSISTORS;

EID: 4344703873     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.546748     Document Type: Conference Paper

References (10)

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