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Volumn 5375, Issue PART 1, 2004, Pages 287-295

Assessments on process parameters' influences to the proximity correction

Author keywords

Grid size; OCV; OPC; Proximity

Indexed keywords

GRID SIZE; ON-CHIP VARIATION (OCV); OPTICAL PROXIMITY CORRECTION (OPC); PROXIMITY;

EID: 4344703784     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536341     Document Type: Conference Paper
Times cited : (6)

References (4)
  • 1
    • 0035767844 scopus 로고    scopus 로고
    • Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM
    • Y. C. Kim, G. Vandenberghe, S. Verhaegen, and K. Ronse, "Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM" Proc. SPIE, 4562, 954 (2002).
    • (2002) Proc. SPIE , vol.4562 , pp. 954
    • Kim, Y.C.1    Vandenberghe, G.2    Verhaegen, S.3    Ronse, K.4
  • 3
    • 0037627744 scopus 로고    scopus 로고
    • Comprehensive approach to determining the specification for mask mean to target
    • S. W. Lee, I. S. Kim, J. H. Lee, H. K. Cho, and W. S. Han, "Comprehensive Approach to Determining the Specification for Mask Mean to Target" Proc. of SPIE, 4889, 209 (2002).
    • (2002) Proc. of SPIE , vol.4889 , pp. 209
    • Lee, S.W.1    Kim, I.S.2    Lee, J.H.3    Cho, H.K.4    Han, W.S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.