Discrepancy between photoluminescence and photoresponse intensities in n-InAs/GaAs and InAs/n-GaAs quantum-dot heterostructures

Solid State Communications

Volumn 132, Issue 2, 2004, Pages 115-118

  Lee, S J ^a   Noh, S K ^a   Lee, K S ^b   Choe, J W ^c  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Kyung Hee University   (South Korea)

Author keywords

A. Indium arsenide; A. Quantum dot; D. Photoresponse; D. Self assembly; E. Photoluminescence

Indexed keywords

INDIUM ARSENIDE; PHOTORESPONSE; ZERO-DIMENSIONAL (0D);

GALLIUM COMPOUNDS; HETEROJUNCTIONS; PHOTOLUMINESCENCE; REFRIGERATORS; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

INDIUM COMPOUNDS;

EID: 4344697368     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.07.009     Document Type: Article

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