Investigation of flow pattern defects in as-grown and rapid thermal annealed CZSi wafers

Journal of Crystal Growth

Volumn 262, Issue 1-4, 2004, Pages 1-6

  Zhang, Jianfeng ^a   Liu, Caichi ^a   Zhou, Qigang ^b   Wang, Jing ^b   Hao, Qiuyan ^a   Zhang, Hongdi ^a   Li, Yangxian ^a  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

A1. Atomic force microscopy; A1. Crystal structure; A1. Defects; A2. Czochralski method; A2. Single crystal growth; B1. Elemental solids

Indexed keywords

ATOMIC FORCE MICROSCOPY; COOLING; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; DOPING (ADDITIVES); FLOW PATTERNS; LIGHT SCATTERING; OPTICAL MICROSCOPY; RAPID THERMAL ANNEALING; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; ULSI CIRCUITS;

CRYSTAL ORIGINATED PARTICLES (COP); ELEMENTAL SOLIDS; FLOW PATTERN DEFECTS; LASER SCATTERING TOMOGRAPHY DEFECTS (LSTD);

CRYSTAL GROWTH;

EID: 0842330084     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.10.010     Document Type: Article

References (14)

1. Itsumi M., Akiya H., Ueki T., Tomita M., Yamawaki M. J. Appl. Phys. 78:1995;5984.
2. Y. Furumura, Proceedings of Second International Symposium Advanced Science and Technical of Si Materials, November; The 145th Committee on Proceedings and Characterization of Crystals, Hawaii, 1996, p. 418.
3. H. Yamamoto, H. Koyama, Proceedings of Second International Symposium Advanced Science and Technical of Si Materials, November; The 145th Committee on Proceedings and Characterization of Crystals, Hawaii, p. 425.
4. M. Muranaka, M. Miura, H. Iwai, M. Kawamura, Y. Tadaki, T. Kaeriyama, International Conference on Solid State Devices and Materials, Hamamatsu, 1997, p. 936.
5. Tempelhoff J., Spiegelberg F., Gleichmann R., Wruck D. Phys. Status Solid A. 56:1979;213.
6. Ryuta J., Morita E., Tanaka T., Shimanuki Y. Jpn. J. Appl. Phy. 29:1990;L1947.
7. Yamagishi H., Fusegawa I., Fujimaki N., Katayama M. Semicond. Sci. Technol. 7:1992;A135-A140.
8. Gall P., Fillard J.P., Bonnafe J., Rakotomovo T., Rufer H., Schwenk H. Sumino K., Yokohama Proceedings of the International Conference, Defect Control in Semiconductors, Yokohama. 1990;255 North-Holland, Amsterdam.
9. Kato M., Yoshida T., Ikeda Y., Kitagawara Y. Jpn. J. Appl. Phys. 35:1996;5597.
10. Miyazaki M., Miyazaki S., Yanase Y., Ochiai T., Shigematsu T. Jpn. J. Appl. Phys. 35:1996;6303.
11. Ueki T., Itsumi M., Takeda T. Jpn. J. Appl. Phys. 37:1998;1667.
12. Voronkov V.V., Falster R. J. Crystal Growth. 194:1998;76.
13. Umeno M., Okui M., Hourai M., Tsuya H. J. Crystal Growth. 36:1997;L591.
14. Takeno H., Ushio S., Takenaka T. Ashok S., Chevallier J., Sumino K., Weber E. Defect Engineering in Semiconductor Growth Proccessing and Device Technology. 1992;51 Materials Research Society, Pittsburgh, PA.