Ionisation stimulated defect annealing in GaAs and InP

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 1018-1023

  Wesch, W ^a   Kamarou, A ^a   Wendler, E ^a   Gartner K ^a   Gaiduk, P I ^b   Klaumunzer S ^c  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

Defect annealing; Defect formation transformation; GaAs; InP; Ion implantation; Swift heavy ions

Indexed keywords

ANNEALING; DEPOSITION; HEAVY IONS; INDIUM COMPOUNDS; ION IMPLANTATION; NUCLEAR ENERGY; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRONIC ENERGY DEPOSITION;

GALLIUM COMPOUNDS;

EID: 0038412660     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00925-X     Document Type: Conference Paper

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