Metallic-semiconducting transition of single-walled carbon nanotubes under high axial strain

Computational Materials Science

Volumn 31, Issue 1-2, 2004, Pages 33-41

  Umeno, Yoshitaka ^a   Kitamura, Takayuki ^a   Kushima, Akihiro ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Carbon nanotube; Deformation; Electronic property; Simulation; Strain; Tight binding

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; COMPUTER SIMULATION; DEFORMATION; ELECTRONS; INTEGRATION; KINETIC ENERGY; METALLIC COMPOUNDS; PHYSICAL PROPERTIES; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR MATERIALS; STRAIN;

HIGH AXIAL STRAIN; METALLIC-SEMICONDUCTING TRANSITION; TIGHT-BINDING; TRANSIENT STRAIN;

CARBON NANOTUBES;

EID: 4344661322     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2004.01.033     Document Type: Article

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