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Volumn 4344, Issue , 2001, Pages 637-643

Electrical linewidth measurement for next generation lithography

Author keywords

ECD; Electrical CD measurement; Electrical linewidth measurement; ELM

Indexed keywords

ANNEALING; DATA ACQUISITION; DIFFUSION; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SURFACE PROPERTIES;

EID: 0034768322     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436789     Document Type: Conference Paper
Times cited : (4)

References (9)
  • 2
    • 0010363665 scopus 로고    scopus 로고
    • Thinking small: Challenges for metrology at centry's end
    • (1997) SPIE , vol.3050 , pp. 44
    • Arnold, W.1
  • 9
    • 0021471807 scopus 로고
    • I-V characteristics of polysilicon resistors at high electric field and the non-uniform conduction mechanism
    • (1984) Solid-State Electronics , vol.27 , pp. 797
    • Lu, N.1    Lu, C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.