Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

Solid-State Electronics

Volumn 46, Issue 4, 2002, Pages 597-599

  Chen, C H ^a   Fang, Y K ^a   Yang, C W ^a   Ting, S F ^a   Tsair, Y S ^a   Chang, C N ^a   Hou, T H ^b   Wang, M F ^b   Yu, M C ^b   Lin, C L ^b   Chen, S C ^b   Yu, C H ^b   Liang, M S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Nitride; PDE; Poly gate depletion; Poly SiGe

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRON MOBILITY; GATES (TRANSISTOR); NITRIDES; POLYSILICON;

POLY-GATE DEPLETION EFFECTS (PDE);

MOSFET DEVICES;

EID: 18244405817     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00262-3     Document Type: Article

References (4)

1. Enhancement of PMOS device with poly-SiGe gate
2. Making silicon nitride film a viable gate dielectric
3. Electrical properties of heavily doped polycrystalline silicon-germanium films