Fabrication and characterization of perovskite CaZrO3 oxide thin films

Ceramics International

Volumn 30, Issue 7, 2004, Pages 1279-1282

  Yu, T ^a   Chen, C H ^a   Chen, X F ^a   Zhu, W ^a   Krishnan, R G ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

A. Films; A. Sol gel processes; C. Dielectric properties; D. Perovskites

Indexed keywords

ACETIC ACID; ANNEALING; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; LIME; MOSFET DEVICES; PERMITTIVITY; PEROVSKITE; SILICA; SOL-GELS; THERMOANALYSIS; THERMOGRAVIMETRIC ANALYSIS; X RAY DIFFRACTION ANALYSIS;

GATE MATERIALS; LEAKAGE CURRENT; NANOELECTRONIC DEVICES; RUTILE STRUCTURE;

THIN FILMS;

EID: 4344636935     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2003.12.037     Document Type: Conference Paper

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