Trade-off between reliability and post-CMP defects during recrystallization anneal for copper damascene interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 350-354

  Alers, G B ^a   Dornisch, D ^b   Siri, J ^a   Kattige, K ^a   Tam, L ^a   Broadbent, E ^a   Ray, G W ^a  

^a Novellus Systems   (United States)

^b Rockwell Semiconductor Systems   (United States)

Author keywords

Annealing; Chemistry; Copper; Electromigration; Grain size; Temperature; Testing; Thermal expansion; Thermal resistance; Thermal stresses

Indexed keywords

ANNEALING; CHEMISTRY; COPPER; DEFECTS; ECONOMIC AND SOCIAL EFFECTS; ELECTROMIGRATION; GRAIN SIZE AND SHAPE; HEAT RESISTANCE; RELIABILITY; TEMPERATURE; TESTING; THERMAL EXPANSION; THERMAL STRESS;

BARRIER LAYERS; COPPER DAMASCENE INTERCONNECTS; DIFFERENTIAL THERMAL EXPANSION; ELECTROMIGRATION RELIABILITY; ELECTROPLATED COPPER FILM; GRAIN SIZE; HIGH TEMPERATURE; PLATING CHEMISTRY;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84949753934     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922926     Document Type: Conference Paper

References (5)

1. C. Lingk and M.E. Gross, J. Appl. Phys. 84, p. 5547 (1998).
2. S.P. Hau-Riege and C.V. Thompson, Appl. Phys. Lett. 76, p. 309 (2000).
3. T. Oshima, T. Tamura, K. Ohmori, H. Aoki, H. Ashihara, T. Saito, H. Yamaguchi, M. Miyauchi, K. Torii, J. Murata, A. Satoh, H. Miyazaki and K. Hinode, IEEE IEDM Tech. Dig., p. 123 (2000).
4. K. Ueno, M. Suzuki, A. Matsumoto, T. Tonegawa, N. Ito, K. Arita, Y. Tsuchiya, T. Wake, A. Kubo, K. Sugai, N. Oda, H. Miyamato, S. Saito, IEEE IEDM Tech. Dig., p. 265 (2000).
5. Shinici Domae, Hiroshi Masuda, Kenji Tateiwa, Yoshiaki Kato, Masahiro Fujimoto, IEEE Int'l Rel. Physics Symp., p. 318 (1998).