Tuning In 0.3Ga 0.7As/GaAs multiple quantum dots for long-wavelength infrared detectors

Applied Physics Letters

Volumn 85, Issue 6, 2004, Pages 1003-1005

  Chua, Ying Chao ^a   Decuir Jr , E A ^a   Passmore, B S ^a   Sharif, K H ^a   Manasreh, M O ^a   Wang, Z M ^b   Salamo, G J ^b  

^a University of Arkansas   (United States)

^b UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAUSSIAN DISTRIBUTIONS; INTERSUBBAND TRANSITIONS; MOMENTUM MATRIX; PHOTON-ELECTRON COUPLING;

CARRIER CONCENTRATION; DENSITY (OPTICAL); DISLOCATIONS (CRYSTALS); INFRARED DETECTORS; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PERMITTIVITY; PHOTOCONDUCTIVITY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 4344624098     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1777822     Document Type: Article

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