Interface properties of metal/cytosine/Si(1 1 1):H heterostructures studied by means of SERS and DFT

Applied Surface Science

Volumn 235, Issue 1-2, 2004, Pages 73-79

  Silaghi, S D ^a   Salvan, G ^a   Friedrich, M ^a   Kampen, T U ^a   Scholz, R ^a   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Ag; Cytosine; DFT(B3LYP LANL2DZ); In; SERS; Si(1 1 1)

Indexed keywords

CHARGE CARRIERS; CHARGE TRANSFER; DNA; INDIUM; INTERFACES (MATERIALS); NANOTECHNOLOGY; PROBABILITY DENSITY FUNCTION; RAMAN SCATTERING; SILICON; SILVER; VACUUM;

BANDGAP SEMICONDUCTING BEHAVIOR; CYTOSINE FILMS; ORGANIC MOLECULAR BEAM DEPOSITION (OMBD); SURFACE ENHANCED RAMAN SPECTROSCOPY (SERS);

HETEROJUNCTIONS;

EID: 4344612749     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.272     Document Type: Conference Paper

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