High-speed characteristics of tunnelling injection and excited-state emitting InAs/GaAs quantum dot lasers

IEE Proceedings: Optoelectronics

Volumn 151, Issue 3, 2004, Pages 143-150

  Qasaimeh, O ^a   Khanfar, H ^a  

^a JORDAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Jordan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION CHIRP; CROSS GAIN MODULATION LASER; EXCITED STATE; QUANTUM DOT LASERS; RELATIVE INTENSITY NOISE; TUNNELING INJECTION;

BAND STRUCTURE; BANDWIDTH; CARRIER CONCENTRATION; DISTRIBUTED FEEDBACK LASERS; ELECTRON TUNNELING; LIGHT EMISSION; LIGHT MODULATION; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SPURIOUS SIGNAL NOISE;

SEMICONDUCTOR LASERS;

EID: 4344609130     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20040392     Document Type: Article

References (14)

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