The tunneling field effect transistor (TFET): The temperature dependence, the simulation model, and its application

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn 3, Issue , 2004, Pages

  Nirschl, Thomas ^a   Wang, Peng Fei ^a   Hansch, Walter ^a   Schmitt Landsiedel, Doris ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT THEORY; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; ELECTRON TUNNELING; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; THERMAL EFFECTS; ZENER DIODES;

TEMPERATURE DEPENDENCE; TUNNELING FIELD EFFECT TRANSISTORS (TFET); ZENER RESISTANCE;

MOSFET DEVICES;

EID: 4344599123     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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