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Volumn 2003-January, Issue , 2003, Pages 291-296
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Ultra low-leakage power strategies for sub-1 v VLSI: Novel circuit styles and design methodologies for partially depleted silicon-on-insulator (PD-SOI) CMOS technology
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Author keywords
CMOS technology; Design methodology; Leakage current; MOS devices; MOSFET circuits; Silicon on insulator technology; Subthreshold current; Switches; Threshold voltage; Very large scale integration
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
DESIGN;
EMBEDDED SOFTWARE;
EMBEDDED SYSTEMS;
INTEGRATED CIRCUIT DESIGN;
LEAKAGE CURRENTS;
MOS DEVICES;
MOSFET DEVICES;
SEMICONDUCTING SILICON;
SWITCHES;
SYSTEMS ANALYSIS;
THRESHOLD VOLTAGE;
VLSI CIRCUITS;
CMOS TECHNOLOGY;
DESIGN METHODOLOGY;
EFFICIENT IMPLEMENTATION;
MOSFET CIRCUITS;
PARTIALLY DEPLETED SILICON ON INSULATORS;
SUB-THRESHOLD CURRENT;
THREE ORDERS OF MAGNITUDE;
ULTRA LOW LEAKAGES;
SILICON ON INSULATOR TECHNOLOGY;
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EID: 4344597132
PISSN: 10639667
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ICVD.2003.1183152 Document Type: Conference Paper |
Times cited : (8)
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References (10)
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