Silicon anisotropic etching without attacking aluminum with Si and oxidizing agent dissolved in TMAH solution

Sensors and Actuators, A: Physical

Volumn 114, Issue 2-3, 2004, Pages 510-515

  Fujitsuka, Norio ^a   Hamaguchi, Kanae ^a   Funabashi, Hirofumi ^a   Kawasaki, Eishi ^b   Fukada, Tsuyoshi ^a  

^a Rd Management Section   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

Aluminum; Oxidizing agent; Si anisotropic etching; Tetramethyl ammonium hydroxide

Indexed keywords

ALUMINUM; AMMONIUM COMPOUNDS; ANISOTROPY; ETCHING; OXIDATION; POTASSIUM COMPOUNDS; SATURATION (MATERIALS COMPOSITION); SOLUTIONS;

MICROPYRAMIDS; OXIDIZING AGENTS;

SILICON;

EID: 4344594290     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2003.11.013     Document Type: Article

References (7)

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