Effects of thermal treatment on the anisotropic etching behavior of Cz- and Fz-silicon

Sensors and Actuators, A: Physical

Volumn 86, Issue 1-2, 2000, Pages 86-90

  Hein, A ^a   Finkbeiner, S ^a   Marek, J ^a   Obermeier, E ^b  

^a ROBERT BOSCH GMBH   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; ETCHING; HEAT TREATMENT; MATHEMATICAL MODELS; OXYGEN; POTASSIUM COMPOUNDS; PRECIPITATION (CHEMICAL); SILICON; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EFFECTS;

ETCH RATES; POTASSIUM HYDROXIDE;

CRYSTAL DEFECTS;

EID: 0034297780     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00407-6     Document Type: Article

References (4)

1. Rauh H. Wacker's Atlas for Characterization of Defects in Silicon. 1986;Wacker-Chemitronic Scientific Publications, Burghausen.
2. E. Dornberger, Prediction of OSF Ring Dynamics and Grown-in Voids in Czochralski Silicon Crystals, Ph.D. Thesis, KU Leuven, Belgium, 1997.
3. Hein A., Muenzel H., Marek J., Obermeier E. The Effects of Impurities in Silicon on Anisotropic Etching in KOH-Solutions. MST 98, Postdam, Germany:1998;409.
4. Wirajanakula W., Matlock J. A formation of crystal defects in carbon-doped Czochralski-grown silicon after a three-step internal gettering anneal. Jpn. J. Electrochem. Soc. 138:1991;2153.