Noise in Schottky-barrier diodes: From static to large-signal operation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5470, Issue , 2004, Pages 322-336

  Pérez, Susana ^a   González, Tomás ^a   Shiktorov, Pavel ^b   Starikov, Evgenij ^b   Gružinskis, Viktoras ^b   Reggiani, Lino ^c   Varani, Luca ^d   Vaissière, Jean Claude ^d  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^c NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^d UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

Monte Carlo simulation; Noise; Schottky barrier diode; THz operations

Indexed keywords

LASER SOURCES; SIGNAL OPERATIONS; THZ OPERATIONS;

COMPUTER SIMULATION; HARMONIC GENERATION; LASERS; MONTE CARLO METHODS; SIGNAL PROCESSING; SPURIOUS SIGNAL NOISE;

SCHOTTKY BARRIER DIODES;

EID: 4344584869     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.546666     Document Type: Conference Paper

References (16)

1. New Directions in Terahertz Technology, J.M. Chamberlain and R.E. Miles, eds., Kluwer, Dordrecht, 1997.
2. Terahertz Sources and Systems. R.E. Miles, P. Harrison and D. Lippens, eds. NATO Science Series: II. Mathematics, Physics and Chemistry - vol. 27 Kluwer Academic Publishers, Dordrecht, 2001.
3. B.L. Gelmont, D.L. Woolard, J.L. Hesler, T.W. Crowe, "A degenerately-doped GaAs Schottky diode model applicable for terahertz frequency regime operation", IEEE Trans. Electron Devices 45, pp. 2521-2527, 1998.
4. T.W. Crowe, J.L. Hesler, R.W. Weikle, S.H. Jones, "GaAs devices and circuits for terahertz applications", Infrared Phys. Technol. 40, pp. 175-189, 1999.
5. P. Bakshi, K. Kempa, "Current driven plasma instabilities in lower dimensional systems", Superlattices and Microstructures 17, pp. 363-372, 1995.
6. E. Starikov, P. Shiktorov, V. Gružinskis, L. Reggiani, L. Varani, J.C. Vaissière, and Jian H. Zhao, "Monte Carlo simulation of the generation of terahertz radiation in GaN", J. Appl. Phys. 89, pp. 1161-1171, 2001.
7. P. Shiktorov, E. Starikov, V. Gružinskis, L. Reggiani, L. Varani, and J.C. Vaissière, "Monte Carlo calculation of electronic noise under high-order harmonic generation". Appl. Phys. Lett. 80, pp. 4759-4761 2002.
8. P. Shiktorov, E. Starikov, V. Gružinskis, S. Pérez, T. González, L. Reggiani, L. Varani, and J.C. Vaissière, "Monte Carlo Simulation of Threshold Bandwidth for High Order Harmonics Extraction", IEEE Trans. Electr. Dev. 50, pp. 1171-1178, 2003.
9. P. Shiktorov, E. Starikov, V. Gružinskis, S. Pérez, T.González, L. Reggiani, L. Varani, J.C. Vaissière, "Upconversion of partition noise in semiconductors operating under periodic large-signal conditions", Phys. Rev. B 67, 165201, 2003.
10. T. González, S. Pérez, E. Starikov, P. Shiktorov, V. Gružinskis, L. Reggiani, L. Varani, J.C. Vaissière, "Microscopic investigation of large-signal noise in semiconductor materials and devices", in Noise in Devices and Circuits, M. Jamal Deen, Zeynep Celik-Butler, M.E. Levinstein, eds., Proc. SPIE 5113, pp. 252-266, 2003.
11. T. González, D. Pardo, L. Reggiani, L. Varani, "The microscopic analysis of electronic noise in GaAs Schottky barrier diodes", J. Appl. Phys. 82, pp. 2349-2358, 1997.
12. + diodes", J. Appl. Phys. 79, pp. 242-252, 1996.
13. K. Brennan and K. Hess, "High field transport in GaAs, InP and InAs", Solid-State Electron. 27, pp. 347-357, 1984.
14. M. V. Fischetti and S. E. Laux, "Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects", Phys. Rev. B 38, pp. 9721-9745, 1988.
15. P. Shiktorov, E. Starikov, V. Gružinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J.C. Vaissière, "Transfer-field methods for electronic noise in submicron semiconductor structures", Rivista Nuovo Cimento 24, No. 9, pp. 1-72, 2001.
16. M. Trippe, G. Bosman, and A. van der Ziel, "Transit-time effects in the noise of Schottky-barrier diodes", IEEE Trans. Microwave Theory Techn. MTT-34, pp. 1183-1192, 1986.