A degenerately-doped GaAs schottky diode model applicable for terahertz frequency regime operation

IEEE Transactions on Electron Devices

Volumn 45, Issue 12, 1998, Pages 2521-2527

  Gelmont, Boris L ^a   Woolard, Dwight L ^a   Crowe, T W ^a  

^a University of Virginia   (United States)

Author keywords

Device simulation; Schottky diode; Transport

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

TERAHERTZ FREQUENCIES;

SCHOTTKY BARRIER DIODES;

EID: 0032315012     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.735730     Document Type: Article

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