Characterization and control of sub-100 nm etch and lithography processes using atomic force metrology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 2, 2004, Pages 1325-1330

  Miller, Kirk ^a   Geiszler, Vincent ^a   Dawson, Dean ^a  

^a VEECO INSTRUMENTS INC   (United States)

Author keywords

AFM; Atomic force microscope; Etch; Lithography; Metrology

Indexed keywords

CRITICAL DIMENSIONS (CD); ETCH SHAPE; SIDEWALL ANGLES; STANDING WAVES;

ALGORITHMS; APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; ETCHING; PROCESS CONTROL; SILICON;

LITHOGRAPHY;

EID: 4344568484     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.533524     Document Type: Conference Paper

References (7)

1. ITRS Roadmap, 2001, Metrology chapter; http://public.itrs.net.
2. Bunday, Bishop & Bennett, "Quantitative Profile-Shape Measurement Study on a CD-SEM with Application to Etch-Bias Control," Proc. SPIE v. 4689 (2002).
3. Y. Martin, H. K. Wickramasinghe, "Method for imaging sidewalls by atomic force microscopy," Applied Physics Letters 64, 2498-2500 (1994).
4. V. Ukraintsev, "Effect of bias variation on total uncertainty of CD measurements," Proc. SPIE, 2003.
5. J. S. Villarrubia, A. E. Vladár, J. R. Lowney and M. T. Postek, "Scanning electron microscope analog of scatterometry," Proc. SPIE v. 4689 (2002).
6. R. Gottscho, J. LaClara and J. Tietz, Solid State Technology, Vol. 46, Issue 3, p.44-49 (2003).
7. ITRS Roadmap, 2003, Metrology chapter; http://public.itrs.net.