SCOPUS 정보 검색 플랫폼

Materials Science and Technology

Volumn 20, Issue 8, 2004, Pages 955-958

Short range and long range strain fields of Bi nanoline

(3) Owen, J H G a Miki, K b,c Bowler, D R d

a UNIVERSITY OF OXFORD (United Kingdom)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

d UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

Bismuth; Long range; Nanowires; Scanning tunnelling microscopy; Short range; Strain fields

Indexed keywords

ATOMIC SCALE WIRES; ELASTIC STRAIN; TENSILE STRAIN;

DIMERS; ELASTICITY; ELECTRONIC STRUCTURE; NANOTECHNOLOGY; OPTICAL RESOLVING POWER; SCANNING TUNNELING MICROSCOPY;

NANOSTRUCTURED MATERIALS;

BISMUTH; SILICONE;

CHEMICAL INTERACTION; CHEMICAL STRUCTURE; CONFERENCE PAPER; DEVICE; ELASTICITY; ELECTRONIC STRUCTURE; ELECTRONICS; EPITAXIAL NANOSCALE STRUCTURE; MOLECULAR INTERACTION; NANOLINE; NANOPARTICLE; NANOSCALE DEVICE; NANOTECHNOLOGY; NANOTUBE; NANOWIRE; SCANNING TUNNELING MICROSCOPY; STRESS STRAIN RELATIONSHIP; STRUCTURE ANALYSIS; SURFACE PROPERTY; TENSILE STRENGTH;

EID: 4344560193 PISSN: 02670836 EISSN: None Source Type: Journal
DOI: 10.1179/026708304225019768 Document Type: Conference Paper

Times cited : (5)

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