Surface roughness of ion-bombarded Si(1 0 0) surfaces: Roughening and smoothing with the same roughness exponent

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 8, 2008, Pages 1276-1281

  Roy, Anupam ^a   Bhattacharjee, K ^a   Lenka, H P ^a   Mahapatra, D P ^a   Dev, B N ^a,b  

^a INSTITUTE OF PHYSICS   (India)

^b DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

61.80.Jh; 68.35.Bs; 68.35.Ct; 68.37.Ef; Ion beam induced smoothing; Roughness exponent; Scanning tunneling microscopy

Indexed keywords

GERMANIUM; ION BOMBARDMENT; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE ROUGHNESS; ULTRATHIN FILMS;

ION-BEAM INDUCED SMOOTHING; ROUGHNESS EXPONENTS;

ION BEAMS;

EID: 43049179381     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.10.045     Document Type: Article

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