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Volumn 68, Issue 3, 2003, Pages 334011-334014

Nanoscale self-affine surface smoothing by ion bombardment

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

EID: 0345602050     PISSN: 10980121     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (32)

References (21)
  • 20
    • 33646628177 scopus 로고    scopus 로고
    • note
    • This qualitative nature remains the same when the native oxide layer on the silicon surface is explicitly taken in the simulation. Both Si and O atom distributions peak at ∼1 eV, the O peak appearing at a slightly higher energy.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.