No benefit from microcrystalline silicon N layers in single junction amorphous silicon p-i-n solar cells

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 170-174

  Poissant, Y ^a   Chatterjee, P ^b   Roca i Cabarrocas, P ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; ELECTRIC POTENTIAL; HYDROGENATION; SEMICONDUCTOR JUNCTIONS;

ELECTRON AFFINITY;

SOLAR CELLS;

EID: 0037245820     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1524026     Document Type: Article

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