Inverted top-emission organic light-emitting device with n-type silicon as cathode

Journal of Physics D: Applied Physics

Volumn 41, Issue 3, 2008, Pages

  Zhao, W Q ^a   Ran, G Z ^a   Xu, W J ^a   Qin, G G ^a,b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; CONCENTRATION (PROCESS); ELECTRONS; OPTIMIZATION; SILICON; SURFACE TREATMENT;

POWER EFFICIENCY; SURFACE ELECTRON CONCENTRATION;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 43049128524     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/3/035106     Document Type: Article

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