Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field

Superlattices and Microstructures

Volumn 43, Issue 5-6, 2008, Pages 431-435

  Jarjour, Anas F ^a   Oliver, Rachel A ^b   Tahraoui, Abbes ^c   Kappers, Menno J ^b   Taylor, Robert A ^a   Humphreys, Colin J ^b  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

InGaN; Quantum confined Stark effect; Single quantum dot; Tight binding model

Indexed keywords

GALLIUM NITRIDE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE SPECTROSCOPY; QUANTUM CONFINEMENT; SEMICONDUCTING INDIUM COMPOUNDS; STARK EFFECT;

MICROPHOTOLUMINESCENCE SPECTROSCOPY; QUANTUM CONFINED STARK EFFECT; SINGLE QUANTUM DOTS; TIGHT BINDING MODELS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 42949119143     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.06.021     Document Type: Article

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