Temperature dependence of the zero-phonon linewidth in InAs/GaAs quantum dots

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 20, 2004, Pages

  Ortner, G ^a   Yakovlev, D R ^a   Bayer, M ^a   Rudin, S ^b   Reinecke, T L ^c   Fafard, S ^d   Wasilewski, Z ^d   Forchel, A ^e  

^a TU DORTMUND UNIVERSITY   (Germany)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^e UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; INDIUM;

ARTICLE; EXPERIMENTAL MODEL; MATHEMATICAL ANALYSIS; NEUTRON SCATTERING; PHONON; PHOTOLUMINESCENCE; QUANTUM DOT; TEMPERATURE DEPENDENCE;

EID: 42749107199     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.201301     Document Type: Article

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