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Volumn 60, Issue 11, 1999, Pages 8392-
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Erratum: Thermoelectric and hot-electron properties of a silicon inversion layer [Phys. Rev. B 56, 12 422 (1997)]
[No Author Info available]
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 4244014886
PISSN: 10980121
EISSN: 1550235X
Source Type: Journal
DOI: 10.1103/PhysRevB.60.8392 Document Type: Erratum |
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Times cited : (5)
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References (0)
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