Diffusion thermopower of a two-dimensional hole gas in SiGe in a quantum Hall insulating state

Physical Review Letters

Volumn 90, Issue 17, 2003, Pages

  Possanzini, C ^a   Fletcher, R ^b   Coleridge, P T ^c   Feng, Y ^c   Williams, R L ^c   Maan, J C ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b QUEEN S UNIVERSITY   (Canada)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC INSULATION; ELECTRON GAS; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; HALL EFFECT; MAGNETIC FIELDS; METAL INSULATOR TRANSITION; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE;

DIFFUSION THERMOPOWER; QUANTUM HALL INSULATING STATE; TWO DIMENSIONAL HOLE GAS;

HETEROJUNCTIONS;

EID: 0041809354     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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