Temperature-induced carrier escape processes studied in absorption of individual InxGa1-xAS quantum dots

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 15, 2004, Pages

  Oulton, R ^a   Tartakovskii, A I ^a   Ebbens, A ^a   Cahill, J ^a   Finley, J J ^a,b   Mowbray, D J ^a   Skolnick, M S ^a   Hopkinson, M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM;

ABSORPTION; ABSORPTION SPECTROPHOTOMETRY; ARTICLE; DIODE; ELECTRIC CONDUCTIVITY; LASER; MEASUREMENT; PHOTON; QUANTUM MECHANICS; TEMPERATURE DEPENDENCE;

EID: 42749099435     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.155323     Document Type: Article

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