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Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 1, 2007, Pages 298-305

Simulation-based comparison of cell design concepts for phase change random access memory

(4) Kim, Dae Hwang a Merget, Florian a Först, Michael a Kurz, Heinrich a

Author keywords

3D Simulation; Confined Cell; Design Concepts; PCRAM; RESET Operation

Indexed keywords

CELL ARCHITECTURES; CELL DESIGN; CELL GEOMETRIES; CRITICAL ISSUES; DESIGN CONCEPTS; INTEGRATION DENSITIES; NUMERICAL ALGORITHMS; PERCOLATION DYNAMICS; PHASE CHANGES; PHASE-CHANGE RANDOM-ACCESS MEMORY (PC-RAM); SIMULATION RESULTS; SIMULATION-BASED; SUB-MODELS; SWITCHING OPERATIONS; THREE DIMENSIONAL (3D) SIMULATIONS;

CELLS; PHASE CHANGE MEMORY; RANDOM ACCESS STORAGE; THREE DIMENSIONAL;

COMPUTER SIMULATION;

ALGORITHM; ARTICLE; COMPUTER PROGRAM; COMPUTER SIMULATION; DATA STORAGE DEVICE; ELECTROCHEMISTRY; ELECTRONICS; INFORMATION RETRIEVAL; METHODOLOGY; STATISTICAL MODEL; TEMPERATURE; THEORETICAL MODEL; TIME;

ALGORITHMS; COMPUTER SIMULATION; COMPUTER STORAGE DEVICES; ELECTROCHEMISTRY; ELECTRONICS; INFORMATION STORAGE AND RETRIEVAL; MODELS, STATISTICAL; MODELS, THEORETICAL; SOFTWARE; TEMPERATURE; TIME FACTORS;

EID: 34447332005 PISSN: 15334880 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (3)

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