Influence of oxygen partial pressure on magnetron sputtered Sr0.8Nd0.3Bi2.5Ta2O9+x ferroelectric thin films

Journal of Alloys and Compounds

Volumn 457, Issue 1-2, 2008, Pages 549-554

  Li, Yibin ^a   Zhang, Sam ^a   Sritharan, Thirumany ^b   Liu, Yang ^c   Chen, T P ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Magnetron sputtering; Oxygen partial pressure; Polarization property; SrBi2Ta2O9 thin film; Substitution

Indexed keywords

MAGNETRON SPUTTERING; OXYGEN; PARTIAL PRESSURE; STRONTIUM COMPOUNDS; SUBSTITUTION REACTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXYGEN PARTIAL PRESSURE; POLARIZATION PROPERTIES;

FERROELECTRIC THIN FILMS;

EID: 42649128085     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2007.03.095     Document Type: Article

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