Charge density variation with fin width in FinFETs: An application of supersymmetric quantum mechanics

Journal of Computational Electronics

Volumn 7, Issue 1, 2008, Pages 14-19

  Shishir, Razib S ^a   Ferry, D K ^a  

^a AZ 85281   (United States)

Author keywords

Bulk inversion; FinFET; Supersymmetric quantum mechanics; Surface inversion

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; CHARGE DENSITY; QUANTUM THEORY;

BULK INVERSION; CHARGE DENSITY VARIATION; FIN FIELD EFFECT TRANSISTORS; SUPERSYMMETRIC QUANTUM MECHANICS; SURFACE INVERSION;

FIELD EFFECT TRANSISTORS;

EID: 42549140750     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-008-0205-7     Document Type: Article

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