Strained-Si, relaxed-Ge or strained-(Si)Ge for future nanoscale p-MOSFETs?

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 144-145

  Krishnamohan, Tejas ^a   Kim, Donghyun ^a   Jungemann, Christoph ^b   Nishi, Yoshio ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING (BTBT); CHANNEL MATERIALS; INTRINSIC DELAY; QUANTUM EFFECTS;

BAND STRUCTURE; LEAKAGE CURRENTS; MONTE CARLO METHODS; POISSON DISTRIBUTION; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS;

MOSFET DEVICES;

EID: 41149149758     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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