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Volumn 46, Issue 11, 2007, Pages 7309-7310

Electrical characteristics of nonpolar InGaN-based light-emitting diodes evaluated at low temperature

Author keywords

Electrical characteristics; Light emitting diodes; Low temperature characterization; Nitride semiconductors; Nonpolar orientations

Indexed keywords

ELECTRIC CONDUCTIVITY; LOW TEMPERATURE EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

ELECTRICAL CHARACTERISTICS; LOW-TEMPERATURE CHARACTERIZATION; NITRIDE SEMICONDUCTORS; NONPOLAR ORIENTATIONS;

LIGHT EMITTING DIODES;

EID: 35948998132 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.7309 Document Type: Article

Times cited : (4)

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