Efficient multi sub-band Monte Carlo simulation of nano-scaled double gate MOSFETs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2006, Pages 216-219

  Saint Martin, Jérôme ^a   Querlioz, Damien ^a   Bournel, Arnaud ^a   Dollfus, Philippe ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

2D electron Gaz; Ballistic transport; Double gate; Monte Carlo; MOSFET; Multi sub band

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; GATE DIELECTRICS; MONTE CARLO METHODS;

BALLISTIC TRANSPORT; QUANTIZATION EFFECTS;

MOSFET DEVICES;

EID: 42549103704     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282875     Document Type: Conference Paper

References (10)

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