Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication

Nanotechnology

Volumn 19, Issue 17, 2008, Pages

  Wang, Huiquan ^a   Jin, Zhonghe ^a   Zheng, Yangming ^a   Ma, Huilian ^a   Li, Tie ^b   Wang, Yuelin ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FABRICATION; HYDROFLUORIC ACID; NANOWIRES; SEMICONDUCTOR JUNCTIONS;

BUFFERED OXIDE ETCH SOLUTION; ELECTROMECHANICAL SYSTEM TECHNOLOGY; ETCHING RATE; SILICON NANOWIRES;

NANOCRYSTALLINE SILICON;

BORON; HYDROFLUORIC ACID; NANOWIRE; OXIDE; SILICON;

ANALYTIC METHOD; ARTICLE; CHEMICAL STRUCTURE; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY;

EID: 42549094126     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/17/175307     Document Type: Article

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